|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. 700V 2.4 4A Pb-free; RoHS-compliant TO-220FM The SSM04N70BGF-H is in TO-220FM for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. G D S These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. TO-220FM (suffix I) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD EAS IAR EAR Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25C TC = 100C Pulsed drain current 1 Value 700 30 4 2.5 15 33 0.26 3 Units V V A A A W W/C mJ A mJ Total power dissipation, TC = 25C Linear derating factor Single pulse avalanche energy Avalanche current Repetitive avalanche energy 100 4 4 TSTG TJ Storage temperature range Operating junction temperature range -55 to 150 -55 to 150 C C THERMAL CHARACTERISTICS Symbol RJC RJA Parameter Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Value 3.8 65 Units C/W C/W Notes: 1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width <300us, duty cycle <2%. 3. Starting Tj = 25C, VDD=50V , L=25mH , RG=25 , IAS= 4A. 9/12/2006 Rev.3.1 www.SiliconStandard.com 1 of 5 SSM04N70BGF-H ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25C, unless otherwise specified) Test Conditions VGS=0V, ID= 1mA Reference to 25C, ID=1mA VGS=10V, ID=2A Min. 700 Typ. 0.6 Max. Units 2.4 V V/C BV DSS/Tj RDS(ON) Static drain-source on-resistance VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Forward transconductance VDS=VGS, ID=250uA VDS=20V, ID=1A 2 - 2.5 16.7 4.1 4.9 11 8.3 23.8 8.2 950 65 6 4 10 100 100 - V S uA uA nA nC nC nC ns ns ns ns pF pF pF Drain-source leakage current VDS=600V, VGS=0V VDS=480V ,VGS=0V, Tj = 150C VGS=30V ID=4A VDS=480V VGS=10V VDS=300V ID=4A RG=10 , VGS=10V RD=75 VGS=0V VDS=25V f=1.0MHz Gate-source leakage current Total gate charge 2 Gate-source charge Gate-drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance 2 Source-Drain Diode Symbol VSD IS I SM Parameter Forward voltage 2 Test Conditions IS= 4A, VGS=0V Min. - Typ. - Max. Units 1.5 V Continuous source current (body diode) VD=VG=0V , VS=1.3V - - 4 15 A A Pulsed source current (body diode)1 Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%. 9/12/2006 Rev.3.1 www.SiliconStandard.com 2 of 5 SSM04N70BGF-H 2.5 1.8 T C =25 o C 2 10V 6.0V 5.0V T C =150 o C ID , Drain Current (A) 10V 6.0V 5.0V 4.5V ID , Drain Current (A) 1.2 1.5 4.5V 1 0.6 4.0V V G =3.5V 0 0.5 V G =4.0V 0 0 2 4 6 8 0 3 6 9 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.2 3 Fig 2. Typical Output Characteristics 1.1 I D =2A V G =10V Normalized RDS(ON) -50 0 50 100 150 2 Normalized BVDSS (V) 1 1 0.9 0.8 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BV DSS vs. Junction Temperature 100 5 Fig 4. Normalized On-Resistance vs. Junction Temperature 4 10 IS (A) T j =150 o C T j = 25 o C VGS(th) (V) 1.2 3 1 2 0.1 0 0.2 0.4 0.6 0.8 1 1 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Junction Temperature Reverse Diode 9/12/2006 Rev.3.1 www.SiliconStandard.com 3 of 5 SSM04N70BGF-H f=1.0MHz 16 10000 I D =4A VGS , Gate to Source Voltage (V) 12 8 C (pF) V DS =320V V DS =400V V DS =480V C iss 100 C oss 4 C rss 0 0 5 10 15 20 25 1 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics 1 Fig 8. Typical Capacitance Characteristics 100 Duty factor=0.5 10 10us 100us 1 Normalized Thermal Response (Rthjc) 0.2 ID (A) 0.1 1ms 10ms 0.1 0.05 PDM 0.02 0.1 100ms T c =25 o C Single Pulse t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1 10 100 1000 10000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedanc VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 9/12/2006 Rev.3.1 www.SiliconStandard.com 4 of 5 SSM04N70BGF-H PHYSICAL DIMENSIONS - TO-220FM E E1 A c1 SYMBOLS Millimeters MIN NOM MAX c2 A A1 4.25 2.30 0.60 1.00 0.40 2.30 2.60 9.70 6.70 ---13.00 11.70 14.90 16.70 ---- 4.45 2.50 0.70 1.20 0.50 2.50 2.80 10.00 7.00 2.54 14.00 12.00 15.20 17.00 3.20 4.65 2.70 0.80 1.40 0.60 2.70 3.00 10.30 7.30 ---15.00 12.30 15.50 17.30 ---- L4 L5 b b1 c c1 c2 E E1 L1 L3 L4 e L L1 L3 L3 L4 b1 L A1 1. All dimensions are in millimeters. b c 2. Dimensions do not include mold protrusions. e PART MARKING - TO-220FM PACKING: Moisture sensitivity level MSL3 1000pcs in tubes packed inside a moisture barrier bag (MBB). 04N70BF-H YWWSSS PART NUMBER: 04N70BF-H = SSM04N70BGF-H DATE/LOT CODE: Y = last digit of the year WW = work week (01 -> 52) SSS = lot code sequence Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 9/12/2006 Rev.3.1 www.SiliconStandard.com 5 of 5 |
Price & Availability of SSM04N70BGF-H |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |